کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5489838 | 1524373 | 2016 | 13 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Study of carbon concentration in GaN grown by metalorganic chemical vapor deposition
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We investigated the C concentration in GaN as a function of the V/III ratio and growth rate for a p-n junction diode structure on a bulk GaN substrate by metalorganic chemical vapor deposition (MOCVD). The C concentration was independent of the growth rate for growth at atmospheric pressure. Moreover, the C concentration in GaN was 3.3Ã1015 cmâ3 at a V/III ratio of 5000 with a growth rate of 2.3 µm/h and 4Ã1015 cmâ3 at a V/III ratio of 3700 with a growth rate of 4.7 µm/h. Both of the major and minor carrier concentrations in the drift layers of a p-n junction structure were optimized at the reasonable growth rate in terms of the short growth time. The C impurity concentration was well controlled at a concentration on the order of 1015 cmâ3.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 456, 15 December 2016, Pages 137-139
Journal: Journal of Crystal Growth - Volume 456, 15 December 2016, Pages 137-139
نویسندگان
Guanxi Piao, Kazutada Ikenaga, Yoshiki Yano, Hiroki Tokunaga, Akira Mishima, Yuzaburo Ban, Toshiya Tabuchi, Koh Matsumoto,