کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
6535337 49300 2015 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Distribution and propagation of dislocation defects in quasi-single crystalline silicon ingots cast by the directional solidification method
ترجمه فارسی عنوان
توزیع و انتشار نقص های جابجایی در شمشهای سیلیکونی شبه تک کریستالی که توسط روش خم شدن جهت
کلمات کلیدی
جابجایی، جداسازی دانه خنک کننده جهت سلول های خورشیدی،
موضوعات مرتبط
مهندسی و علوم پایه مهندسی شیمی کاتالیزور
چکیده انگلیسی
We investigated the distribution and propagation of dislocation defects in quasi-single crystalline (QSC) silicon ingots. The dislocation distributions in both the central single crystalline region and the surrounding polycrystalline region of the ingot are measured and compared. Although the dislocation density in the central single crystalline region is much lower than that in the surrounding polycrystalline region, dislocations in this region propagate and spread with the growth of the silicon crystal, especially at the final stage of solidification. The performances of solar cells made of wafers from different parts of the QSC silicon ingot are also compared. The results show that solar cells made of wafers from the middle part of the ingot have the best performance and those made of wafers from the top part of the ingot have the worst performance.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 132, January 2015, Pages 1-5
نویسندگان
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