کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
6536176 | 49326 | 2013 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
ALD grown bilayer junction of ZnO:Al and tunnel oxide barrier for SIS solar cell
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
کاتالیزور
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: ALD grown bilayer junction of ZnO:Al and tunnel oxide barrier for SIS solar cell ALD grown bilayer junction of ZnO:Al and tunnel oxide barrier for SIS solar cell](/preview/png/6536176.png)
چکیده انگلیسی
Various metal oxides are probed as extrinsic thin tunnel barriers in Semiconductor Insulator Semiconductor solar cells. Namely Al2O3, ZrO2, Y2O3, and La2O3 thin films are in between n-type ZnO:Al (AZO) and p-type Si substrates by means of Atomic Layer Deposition. Low reverse dark current-density as low as 3Ã10â7Â A/cm2, a fill factor up to 71.3%, and open-circuit voltage as high as 527Â mV are obtained, achieving conversion efficiency of 8% for the rare earth oxide La2O3. ZrO2 and notably Al2O3 show drawbacks in performance suggesting an adverse reactivity with AZO as also indicated by X-ray Photoelectron Spectroscopy.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 117, October 2013, Pages 178-182
Journal: Solar Energy Materials and Solar Cells - Volume 117, October 2013, Pages 178-182
نویسندگان
O. Bethge, M. Nobile, S. Abermann, M. Glaser, E. Bertagnolli,