کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
6610479 459551 2015 13 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
The influence of composition on band gap and dielectric constant of anodic Al-Ta mixed oxides
ترجمه فارسی عنوان
اثر ترکیب بر روی شکاف باند و ثابت دی الکتریک اکسید مخلوط آنتیک آلتا
موضوعات مرتبط
مهندسی و علوم پایه مهندسی شیمی مهندسی شیمی (عمومی)
چکیده انگلیسی
Al-Ta mixed oxides were grown by anodizing sputter-deposited Al-Ta alloys of different composition. Photocurrent spectra revealed a band gap, Eg, slightly independent on Ta content and very close to that of anodic Ta2O5 (∼4.3 eV) with the exception of the anodic film on Al-10at% Ta, which resulted to be not photoactive under strong anodic polarization. The photoelectrochemical characterization allowed to estimate also the oxides flat band potential and to get the necessary information to sketch the energetic of the metal/oxide/electrolyte interfaces. Impedance measurements allowed to confirm the formation of insulating material and to estimate the dielectric constant of the oxides, which resulted to be monotonically increasing with increasing Ta content (from 9 for pure Al2O3 to 30 for pure Ta2O5).
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Electrochimica Acta - Volume 180, 20 October 2015, Pages 666-678
نویسندگان
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