Study of SiGe selective epitaxial process integration with high-k and metal gate for 16/14 nm nodes FinFET technology

Study of SiGe selective epitaxial process integration with high-k and metal gate for 16/14 nm nodes FinFET technology

Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 163, 1 September 2016, Pages 49-54

Guilei Wang, Changliang Qin, Huaxiang Yin, Jun Luo, Ningyuan Duan, Ping Yang, Xingyu Gao, Tao Yang, Junfeng Li, Jiang Yan, Huilong Zhu, Wenwu Wang, Dapeng Chen, Tianchun Ye, Chao Zhao, Henry H. Radamson,