Transition metal dichalcogenide and hexagonal boron nitride heterostructures grown by molecular beam epitaxy

Heterostructures coupling transition metal dichalcogenides (TMDs) and insulating hexagonal boron nitride (h-BN) were grown by molecular beam epitaxy (MBE) demonstrating the unique opportunities for fabricating all 2D heterostructures with the desired band alignments for novel nanoelectronic devices. Structural and chemical characterization of the TMDs and h-BN was conducted via reflection high energy electron diffraction (RHEED), X-ray diffraction (XRD), transmission electron microscopy (TEM), scanning tunneling microscopy/spectroscopy (STM), and X-ray photoelectron spectroscopy (XPS).