Improved programming and erasing speeds of poly-Si flash memory device by HfO2/Si3N4 bandgap-engineered trapping layer

- HfO2/Si3N4 bandgap-engineered trapping layer is applied to nanowire flash device for the first time.
- P/E speeds can be significantly improved by bandgap-engineered trapping layer.
- The improvement is more obvious on nanowire channel flash device.
- Good retention and endurance characteristics are also demonstrated.