Benchmark test of Monte-Carlo simulation for high resolution electron beam lithography

► Quantitative comparison of Monte-Carlo simulation codes. ► Investigating the influence of secondary electron usage on the Point-Spread-Function. ► Monitoring influence on 100 keV high resolution electron beam lithography. ► SE consideration leads to dose uniformity advantage and increased process window. ► Observing high impact on pattern containing structures and gaps smaller than 100 nm.