کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7117701 | 1461366 | 2018 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Study on the deliquescence of AlSb/Sb stacks deposited by pulsed laser deposition
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
AlSb is a new type of optoelectronic material with wide potential application prospects, but the applications of AlSb thin films for solar cells were few reported before, owing to the intrinsic drawbacks of deliquescence for AlSb. In this work, four types of AlSb/Sb stacks were fabricated by using pulsed laser deposition: (1) AlSb/Sb (5â¯nm), (2) AlSb/Sb (10â¯nm), (3) AlSb/Sb (15â¯nm) and (4) the in situ annealed AlSb film covered with Sb film which thickness is 15â¯nm. The experimental results indicate that the thicker the Sb layer deposited on the surface of the AlSb film is, the lower the degree of deliquescence will be. XRD measurements showed that the AlSb/Sb stacks were not deliquesced completely after exposed to air for 48â¯h. The EDS spectrum suggested that the percentage of oxygen atoms in the annealed AlSb film covered with Sb (15â¯nm) was smaller than the unannealed. The SEM morphology analysis revealed the deliquescence of AlSb film: the local film deliquesced to form sand inclusions first, after then the gradual increased of the sand inclusions lead to all deliquescence of the crystalline AlSb.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 81, July 2018, Pages 102-107
Journal: Materials Science in Semiconductor Processing - Volume 81, July 2018, Pages 102-107
نویسندگان
Xiaolan Liu, Jiyang Liu, Ke Yang, Siying He, Hongting Lu, Bing Li, Guanggen Zeng, Jingquan Zhang, Wei Li, Lili Wu, Lianghuan Feng,