کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7118176 | 1461373 | 2018 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Tailoring of optical and electrical properties of transparent and conductive Al-doped ZnO films by adjustment of Al concentration
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Tailoring of optical and electrical properties of transparent and conductive Al-doped ZnO films by adjustment of Al concentration Tailoring of optical and electrical properties of transparent and conductive Al-doped ZnO films by adjustment of Al concentration](/preview/png/7118176.png)
چکیده انگلیسی
Highly optically transparent and electrically conductive Al-doped ZnO (AZO) thin films with varied Al concentrations were synthesized by means of reactive deposition of ZnO host films and in-situ doping of Al by pulsed laser co-ablation of a Zn target and an Al target with the assistance of an oxygen plasma. The optical and electrical properties of AZO films were tailored by the adjustment of Al concentration which was realized by varying the laser fluence on the Al target. The morphology, composition and structure as well as the optical and electrical properties were characterized and the effects of Al doping and post-deposition annealing were investigated. Similar with undoped ZnO, the synthesized AZO films have a hexagonal wurtzite structure with the crystallinity deteriorated, present high visible transparency with the absorption edge blue shifted and show good electrical properties with the electrical conductivity increased. The structural, optical and electrical properties are strongly dependent on Al concentration and are significantly improved after annealing in H2/N2 mixed gas. Annealed AZO films containing 3.0 at% Al have optical properties including an absorption edge near 325 nm and an optical band gap of 3.67 eV and electrical properties covering an electrical resistivity of 5.27 à 10â4 Ω cm and a carrier concentration of 1.11 à 1021 cmâ3 with a Hall mobility of 10.7 cm2/V s.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 74, February 2018, Pages 147-153
Journal: Materials Science in Semiconductor Processing - Volume 74, February 2018, Pages 147-153
نویسندگان
Wu Zhang, Jie Gan, Lequn Li, Zhigao Hu, Liqun Shi, Ning Xu, Jian Sun, Jiada Wu,