کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7118369 | 1461391 | 2016 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Ultra-long Si3N4 nanobelts prepared by nanosilicon, nanosilica and graphite
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The composition and morphology of obtained products depended on the processing atmosphere using the raw materials of nanosilicon, nanosilica and graphite, with N2-generating several millimeters long single-crystal Si3N4 nanobelts (NBs) and Ar SiC nanobelts. The width and thickness of in situ NBs ranged from 100 to 300Â nm and 50-100Â nm with an average width of 196Â nm, while the width and thickness of ex situ NBs fluctuated from 150 to 500Â nm and 80-200Â nm with an average width of 436Â nm. Alumina-assisted VS mechanism was proposed for the growth mode of in situ growth of Si3N4 nanobelts, while a combined mechanism involving VS and VLS was controlled the growth of Si3N4 nanobelts obtained on the inner walls of the crucible due to the presence of Fe2O3, which provides an effective means of fabricating ultra-long Si3N4 nanobelts on an industrial scale.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 56, December 2016, Pages 189-195
Journal: Materials Science in Semiconductor Processing - Volume 56, December 2016, Pages 189-195
نویسندگان
Ping Hu, Shun Dong, Cheng Fang, Yuan Cheng, Boqian Sun, Guiqing Chen,