کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7119590 | 1461418 | 2014 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Dielectric characteristics of gamma irradiated Au/SnO2/n-Si/Au (MOS) capacitor
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The dielectric characteristics of gamma irradiated Au/SnO2/n-Si/Au (MOS) capacitor were studied. The MOS capacitor was irradiated by a 60Co gamma radiation source with a dose rate of 0.69 kGy/h. The dielectric parameters such as dielectric constant (εâ²), dielectric loss (εâ³), loss factor (tan δ) and ac electrical conductivity (Ïac) were calculated from the capacitance-voltage (C-V) and conductance-voltage (G/Ï-V) measurements. It is found that the C and G/Ï values decrease with the increasing total dose due to the irradiation-induced defects at the interface. Also, the calculated values of εâ², εⳠand Ïac are found to decrease with an increased radiation dose. This result indicates that the dielectric characteristics of the MOS capacitor are sensitive to gamma-ray dose.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 28, December 2014, Pages 89-93
Journal: Materials Science in Semiconductor Processing - Volume 28, December 2014, Pages 89-93
نویسندگان
Adem TataroÄlu, Mert Yıldırım, Halil Mert Baran,