کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7119605 | 1461418 | 2014 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electrical and optical properties of Cu2ZnSnS4 grown by a thermal co-evaporation method and its diode application
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
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چکیده انگلیسی
Cu2ZnSnS4 (CZTS) is low cost and constitutes non-toxic materials abundant in the earth crust. Environment friendly solar cell absorber layers were fabricated by a thermal co-evaporation technique. Elemental composition of the film was stated by energy dispersive spectroscopy (EDS). Some optical and electrical properties such as absorption of light, absorption coefficient, optical band gap charge carrier density, sheet resistance and mobility were extracted. Optical band gap was found to be as 1.44 eV, besides, charge carrier density, resistivity and mobility were found as 2.14Ã1019 cmâ3, 8.41Ã10â4 Ω cm and 3.45Ã102 cm2 Vâ1 sâ1, respectively. In this study Ag/CZTS/n-Si Schottky diode was fabricated and basic diode parameters including barrier height, ideality factor, and series resistance were concluded using current-voltage and capacitance-voltage measurements. Barrier height and ideality factor values were found from the measurements as 0.81 eV and 4.76, respectively, for Ag/CZTS/n-Si contact.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 28, December 2014, Pages 98-102
Journal: Materials Science in Semiconductor Processing - Volume 28, December 2014, Pages 98-102
نویسندگان
Ahmet Tombak, Yusuf Selim Ocak, Mustafa Fatih GeniÅel, Tahsin Kilicoglu,