کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7119726 | 1461429 | 2014 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Structural, morphological, optical, and magnetic properties of Ni-doped CuO nanostructures prepared by a rapid microwave combustion method
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
In the present paper, we report a facile and rapid microwave-assisted combustion synthesis method for the preparation of pure and Ni-doped CuO nanostructures with different weight ratios (0.5, 1.0, 1.5, and 2.0 at wt% of Ni). The structure and morphology of the pure and Ni-doped CuO samples were investigated by X-ray diffraction (XRD), high resolution scanning electron microscopy (HR-SEM), energy dispersive x-ray analysis (EDX), diffuse reflectance spectroscopy (DRS), photoluminescence (PL) spectroscopy and vibrating sample magnetometry (VSM). XRD patterns refined by the Rietveld method indicated the formation of single-phase monoclinic structure and also confirmed that Ni ions are successfully doped into CuO crystal lattice by occupying Cu ionic sites. Interestingly, the morphology was found to transform substantially from nanoflowers to nanoparticles with close-packed periodic array, and then into nanocrystals with the variation of Ni content. The optical band gap estimated using DRS was found to be 3.9Â eV for pure CuO and then increases up to 4.3Â eV with increasing Ni content. PL spectra at room temperature showed a strong green emission band, and thereby confirmed the above results. Magnetic measurements reveal a room temperature ferromagnetism (RTFM) with an optimum value of saturation magnetization of 1.3140Ã10â3Â emu/g for 2.0Â wt% of Ni.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 17, January 2014, Pages 110-118
Journal: Materials Science in Semiconductor Processing - Volume 17, January 2014, Pages 110-118
نویسندگان
N. Mohamed Basith, J. Judith Vijaya, L. John Kennedy, M. Bououdina,