Numerical simulation of lateral diffused metal oxide semiconductor field effect transistors: A novel technique for electric field control to improve breakdown voltage

In this paper, we propose a novel technique to control the electric field in Lateral Diffused Metal Oxide Semiconductor (LDMOS) Field Effect Transistors, in order to increase the breakdown voltage. The key idea in this work is increasing the smoothness of the electric field by extra oxide (EO) on the gate sidewall at the drain side of a deep gate structure. The EO region effects on the breakdown voltage by uniformity of the electric field profile. Our results show that the electric field will be maximally flatted by optimization of EO region. Therefore, the proposed structure is called maximally flat deep gate LDMOS (MFDG-LDMOS). The novel features of MFDG-LDMOS are simulated and compared with a conventional LDMOS (C-LDMOS). Our results show that the breakdown voltage and the on-state resistance of the MFDG-LDMOS improve about 48% and 25% in comparison with the C-LDMOS, respectively.