کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
727989 1461412 2015 9 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
The significant effect of film thickness on the properties of chalcopyrite thin absorbing films deposited by RF magnetron sputtering
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
The significant effect of film thickness on the properties of chalcopyrite thin absorbing films deposited by RF magnetron sputtering
چکیده انگلیسی

In this paper, thickness dependent structural, surface morphological, optical and electrical properties of RF magnetron sputtered CuIn0.8Ga0.2Se2 (CIGS) thin films were studied using X-ray diffraction (XRD), Transmission electron microscopy (TEM), Field emission scanning electron microscopy (FE-SEM), Atomic force microscopy (AFM), UV–vis–NIR spectrophotometer and Keithley electrical measurement unit. The peak intensity along (112) plane as well as crystallite size was found to increase with thickness. However, for higher film thickness >1.16 μm, crystallinity reduced due to higher % of Cu content. TEM analysis confirmed pollycrysallinity as well as chalcopyrite phase of deposited films. The band gap was found to decrease with increase in thickness yielding a minimum value of 1.12 eV for film thickness 1.70 μm. The I–V characteristics showed the ohmic behavior of metal semiconductor contact with higher conductivity for film thickness 1.16 μm.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 34, June 2015, Pages 350–358
نویسندگان
, , , , ,