Microstructure and magnetic properties of In1−xCrxN thin films

Microstructure and magnetic properties of In1−xCrxN thin films grown on GaN-on-sapphire templates by molecular beam epitaxy are investigated. Optimized growth conditions are identified for the In1−xCrxN thin films at reduced growth temperature. The In1−xCrxN thin films on the top of the InGaN buffer layers exhibit high crystalline-quality. The magnetic properties of In1−xCrxN thin films show a ferromagnetic behavior even at room temperature.