Physical investigations on Sb2S3 sprayed thin film for optoelectronic applications

Sb2S3 thin films have been obtained at 250 °C on glass substrates using the spray pyrolysis techniques. The structural study by means of XRD analysis shows that Sb2S3 thin film crystallized in the orthorhombic phase. The discussion of some structural constants has been made by means of both XRD and AFM investigations. Moreover, the optical analysis via the transmittance and the reflectance measurements reveals that Sb2S3 sprayed thin film has a direct transition with the band gap energy Eg equal to 1.72 eV. The analysis in 300–2500 nm domain of the refractive index data through Wemple–DiDomenico model leads to the single oscillator energy (E0=2.32 eV), and the dispersion energy (Ed=10.03 eV). The electrical study leads to the dc activation energy is of the order of 0.72 eV and the maximum barrier high is WM=0.87 eV. From the power exponent variation in terms of the heated temperature, it is found that the mechanism of conduction matches well the correlated barrier hopping CBH model.