کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
728856 | 892857 | 2010 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electrical and optical characterization of GaN-based light-emitting diodes fabricated with top-emission and flip-chip structures
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Electrical and optical characterization of GaN-based light-emitting diodes fabricated with top-emission and flip-chip structures Electrical and optical characterization of GaN-based light-emitting diodes fabricated with top-emission and flip-chip structures](/preview/png/728856.png)
چکیده انگلیسی
We investigated the electrical and optical characteristics of GaN-based light-emitting diodes (LEDs) fabricated with top-emission and flip-chip structures. Compared with top-emission LEDs, flip-chip LEDs exhibited a 0.25 V smaller forward voltage and an 8.7 Ω lower diode resistance. The light output power of the flip-chip LED was also larger than that of the top-emission LED by factors of 1.72 and 2.0 when measured before and after packaging, respectively. The improved electrical and optical output performances of flip-chip LEDs were quantitatively analyzed in terms of device resistance and ray optics, respectively.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 13, Issue 3, September 2010, Pages 180–184
Journal: Materials Science in Semiconductor Processing - Volume 13, Issue 3, September 2010, Pages 180–184
نویسندگان
Hyunsoo Kim, Sung-Nam Lee, Jaehee Cho,