Dopant-defect interactions in Ge: Density functional theory calculations

Germanium is being actively considered by the semiconductors community as a mainstream material for nanoelectronics application. This is driven by its advantageous materials properties, however, the defect processes in germanium are less understood as compared to silicon. In the present review recent developments in the study of impurities including dopant-defect interactions, diffusion and point defect engineering are discussed. The focus is on technologically important p-type and n-type dopants but important impurities such as oxygen are also discussed.