Magnetism in melt grown dilute magnetic semiconductor Ge1−xMnx from electron density

Dilute magnetic semiconductor materials Ge1−xMnx (x=0.04, 0.06 and 0.10) have been grown via a melt growth technique. The influence of the intermetallic secondary phases like Mn-poor Ge8Mn11 and Mn-rich Ge3Mn5 has been analyzed quantitatively from charge density studies. Three-dimensional charge density pictures, arrangement of charges on two-dimensional Miller planes and one-dimensional charge density profiles between nearest neighbors along the bond path have been enumerated using a statistical approach, the maximum entropy method using experimental X-ray structure factors. The Rietveld method and pair distribution functions (PDF) have been used to analyze the X-ray information for local structural features. A correlation between spatial charge distribution and magnetic behavior of the chosen system has been achieved using a charge density route.