کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
729047 | 1461439 | 2006 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Spatially resolved X-ray diffraction measurements on (Al,Ga)N/GaN/4H-SiC heterostructures for electronic devices
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موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
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چکیده انگلیسی
Structural defects and their impact on the performance of electronic devices are of permanent interest for crystal growers and device manufacturers. This is especially true for epitaxial (Al,Ga)N/GaN-based high electron mobility transistor structures on 4H-SiC (0 0 0 1) substrates. This work concentrates on the recognition and imaging of defects in (Al,Ga)N/GaN/4H-SiC(0001) heterostructures accomplished non-destructively by three X-ray diffraction techniques. X-ray topography and X-ray Bragg angle mapping are compared with respect to the spatial resolution of the defects. X-ray curvature measurements are used to quantify long-ranging stresses in the heterostructure during device fabrication.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 9, Issues 1–3, February–June 2006, Pages 8–14
Journal: Materials Science in Semiconductor Processing - Volume 9, Issues 1–3, February–June 2006, Pages 8–14
نویسندگان
L. Kirste, S. Müller, R. Kiefer, R. Quay, K. Köhler, N. Herres,