کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
729060 | 1461439 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Competition between internal and heavy doping gettering options in epi-silicon
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
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چکیده انگلیسی
By studying the competition between internal and p+ gettering, it was possible to identify the unwanted contaminant and estimate its concentration in unintentionally contaminated Si epi-structures simultaneously submitted to both gettering options. The contaminant concentration in the thermally untreated samples was below the DLTS detectability limit. Stratigraphic DLTS on thermally treated samples and EBIC study of the internal gettering allowed to establish that the contaminant was Fe. The occurrence of internal gettering even in presence of p+ gettering in p/p+ epi-structures suggested that the initial Fe concentration could have been in the range â¼1.5Ã109-5.2Ã1010Â cmâ3. Internal gettering is effective in p+ substrate because of the low onset temperature of p+ gettering.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 9, Issues 1â3, FebruaryâJune 2006, Pages 74-77
Journal: Materials Science in Semiconductor Processing - Volume 9, Issues 1â3, FebruaryâJune 2006, Pages 74-77
نویسندگان
C. Frigeri, E. Gombia, A. Motta,