کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
729129 1461439 2006 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
The surface topography of GaN grown on Si (1 1 1) substrate before and after wet chemical etching
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
The surface topography of GaN grown on Si (1 1 1) substrate before and after wet chemical etching
چکیده انگلیسی

Surface topography of GaN layer grown on Si (1 1 1) using metalorganic chemical vapor deposition before and after etching were investigated by plan-view transmission electron microscopy and scanning electron microscopy. Different shape of etch pits appeared on GaN with different thickness, and typical pits which reflected the dislocation interaction always occurred at the junction of sub-grains. The mechanism was discussed.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 9, Issues 1–3, February–June 2006, Pages 403–406
نویسندگان
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