Study of structural, electrical and photoconductive properties of F and P co-doped SnO2 transparent semiconducting thin film deposited by spray pyrolysis

Transparent conducting phosphorus–fluorine co-doped tin oxide (SnO2:(P, F)) thin films have been deposited onto preheated glass substrates using the spray pyrolysis technique by the various dopant quantity of spray solution. The [F/Sn] atomic concentration ratio (x) in the spray solution is kept at value of 0.7 and the [P/Sn] atomic ratio (y) varied at values of 0, 0.001, 0.005, 0.01, 0.02, 0.04, 0.06, and 0.10. The structural, morphological, X-ray diffraction, electrical, optical and photoconductive properties of these films have been studied. It is found that the films are polycrystalline in nature with a tetragonal crystal structure corresponding to SnO2 phase having orientation along the (110) plane and polyhedrons like grains appear in the FE-SEM image. The average grain size increases with increasing P-dopant concentration. The compositional analysis of FTO:P thin films were studied using EDAX. The Hall effect measurements have shown n-type conductivity in all deposited films. The lowest sheet resistance and highest the carrier concentration about 6.4 Ω/□ and 7.4×1022, respectively, were obtained for the film deposited with y=[P/Sn]=0.01. The films deposited with y=0.04 phosphorus-doped SnO2:F shows 68% optical transparency. From the photoconductive studies, the P-doped films exhibited sensitivity to incident light especially in y=0.04. The electrical resistivity and carrier concentration vary in rang 6.2×10−4 to 21.1×10−4 Ω cm and 7.4×1022 to 1.3×1022 cm−3, respectively.