Electrical characterization of high-k gate dielectrics fabricated using plasma oxidation and post-deposition annealing of a Hf/SiO2/Si structure

High permittivity (high-k) gate dielectrics were fabricated using the plasma oxidation of Hf metal/SiO2/Si followed by the post-deposition annealing (PDA), which induced a solid-phase reaction between HfOx and SiO2. The oxidation time and PDA temperature affected the equivalent oxide thickness (EOT) and the leakage current density of the high-k dielectric films. The interfacial structure of the high-k dielectric film/Si was transformed from HfOx/SiO2/Si to HfSixOy/Si after the PDA, which led to a reduction in EOT to 1.15 nm due to a decrease in the thickness of SiO2. These high-k dielectric film structures were investigated by X-ray photoelectron spectroscopy. The leakage current density of high-k dielectric film was approximately four orders of magnitude lower than that of SiO2.