Influence of annealing temperature on electrical characteristics of Ti/Au/GaAsN Schottky diode with 0.2% nitrogen incorporation

Current–voltage measurements and capacitance–voltage–frequency profiling were used to study the electrical properties of Ti–Au/GaAsN Schottky diodes with 0.2% nitrogen dilution that were annealed at 500 °C and 700 °C. We observed an increase in ideality factor, saturation current and series resistance when we increased annealing temperature up to 500 °C. Annealing Schottky diode at 700 °C changes drastically its interface, and leads to model it as two parallel diodes to explain the increase in turn-on voltage obtained from I–V measurement. Interface atoms interdiffusion may be responsible for SBH inhomogeniety that produced discrepancy between the SBH obtained from I–V and C–V measurements. Annealing at a 700 °C temperature has led to an increase in depletion region depth and interface states and/or traps density. Frequency capacitance dependence was observed for all annealed Schottky diodes. This is attributed to the annihilation of deep traps that are believed to be responsible for capacitance independence from frequency found in as grown Schottky diodes.