کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
747346 | 894516 | 2010 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
DC and RF characterization of AlGaN/GaN HEMTs with different gate recess depths
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: DC and RF characterization of AlGaN/GaN HEMTs with different gate recess depths DC and RF characterization of AlGaN/GaN HEMTs with different gate recess depths](/preview/png/747346.png)
چکیده انگلیسی
This work compares AlGaN/GaN high-electron-mobility transistors (HEMT) with different gate recess depths. Small signal analysis showed that the best device performance was achieved at an appropriate recess depth primarily that was associated with maximized intrinsic transconductance and minimized source resistance. An fT × Lg product of as high as 25.6 GHz-μm was obtained in a device with a gate recess depth of 10 nm. Further increasing the recess depth lowered the intrinsic transconductance and thereby worsened the performance. This effect was explained by the degradation of transport properties by the epitaxial damage that was itself caused by plasma-assisted dry etching processes.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 54, Issue 5, May 2010, Pages 582–585
Journal: Solid-State Electronics - Volume 54, Issue 5, May 2010, Pages 582–585
نویسندگان
Heng-Kuang Lin, Fan-Hsiu Huang, Hsiang-Lin Yu,