کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
752742 | 1462243 | 2013 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Performance improvement of normally off AlGaN/GaN FinFETs with fully gate-covered nanochannel
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
• The pulse measurements for the AlGaN/GaN FinFETs with normally-off operation.
• The proposed FinFET exhibits the reduced gate/drain lag.
• The device also shows high on-state performances for high current operation.
Normally-off AlGaN/GaN FinFETs have been fabricated by fully covering the nanochannel region with a metal gate. Removing the source/drain extensions (gate underlap regions) greatly decreases the access resistance of the device, which results in an order of magnitude higher on-current and transconductance. As compared with earlier HEMT FinFETs, where the nanochannel is only partially covered by the gate, the carrier trapping at the surface and in the buffer layer is effectively reduced, improving the gate and the drain lags.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 89, November 2013, Pages 124–127
Journal: Solid-State Electronics - Volume 89, November 2013, Pages 124–127
نویسندگان
Ki-Sik Im, Dong-Hyeok Son, Ho-Kyun Ahn, Sung-Bum Bae, Jae-Kyoung Mun, Eun-Soo Nam, Sorin Cristoloveanu, Jung-Hee Lee,