کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
78027 | 49314 | 2014 | 4 صفحه PDF | دانلود رایگان |
• Hole motion through the heterointerface in crystalline/amorphous Si solar cells.
• Band mismatch leads to asymmetrical carrier transport in opposing directions.
• Minority carriers accumulate on the low-energy side of the heterointerface.
• Accumulation causes an electrostatic potential to retard further carrier transport.
By using transient-capacitance techniques we probe the mechanism of hole transport in amorphous/crystalline silicon heterojunction solar cells. The devices are formed by depositing undoped amorphous silicon followed by p-type amorphous silicon on n-type crystalline silicon wafers. The capacitance transients indicate that hole transport from p-type amorphous silicon to n-type crystalline silicon is hindered by hole accumulation in the depletion region of the crystalline silicon. The results are explained with a model based on electrostatic repulsion owing to hole build-up at the crystalline/amorphous interface. We apply these results to other heterojunction solar cells.
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Journal: Solar Energy Materials and Solar Cells - Volume 129, October 2014, Pages 13–16