کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
7844484 1507384 2017 33 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
The role of contact resistance in graphene field-effect devices
ترجمه فارسی عنوان
نقش مقاومت به تماس در دستگاه های میدان اثر گرافن
کلمات کلیدی
گرافن، خواص الکترونیکی، ترانزیستور اثر میدان، تماس با مقاومت، رابط گرافیکی فلزی / گرافین
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
چکیده انگلیسی
The extremely high carrier mobility and the unique band structure, make graphene very useful for field-effect transistor applications. According to several works, the primary limitation to graphene based transistor performance is not related to the material quality, but to extrinsic factors that affect the electronic transport properties. One of the most important parasitic element is the contact resistance appearing between graphene and the metal electrodes functioning as the source and the drain. Ohmic contacts to graphene, with low contact resistances, are necessary for injection and extraction of majority charge carriers to prevent transistor parameter fluctuations caused by variations of the contact resistance. The International Technology Roadmap for Semiconductors, toward integration and down-scaling of graphene electronic devices, identifies as a challenge the development of a CMOS compatible process that enables reproducible formation of low contact resistance. However, the contact resistance is still not well understood despite it is a crucial barrier towards further improvements. In this paper, we review the experimental and theoretical activity that in the last decade has been focusing on the reduction of the contact resistance in graphene transistors. We will summarize the specific properties of graphene-metal contacts with particular attention to the nature of metals, impact of fabrication process, Fermi level pinning, interface modifications induced through surface processes, charge transport mechanism, and edge contact formation.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Progress in Surface Science - Volume 92, Issue 3, August 2017, Pages 143-175
نویسندگان
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