Structure, composition and optical properties of Cu2ZnSnS4 thin films deposited by Pulsed Laser Deposition method

Polycrystalline Cu2ZnSnS4 (CZTS) thin films have been directly deposited on heating Mo-coated glass substrates by Pulsed Laser Deposition (PLD) method. The results of energy dispersive X-ray spectroscopy (EDX) indicate that these CZTS thin films are Cu-rich and S-poor. The combination of X-ray diffraction (XRD) results and Raman spectroscopy reveals that these thin films exhibit strong preferential orientation of grains along [1 1 2] direction and small Cu2−xS phase easily exists in CZTS thin films. The lattice parameters and grain sizes have been examined based on XRD patterns and Atom Force Microscopy (AFM). The band gap (Eg) of CZTS thin films, which are determined by reflection spectroscopy varies from 1.53 to 1.98 eV, depending on substrate temperature (Tsub). The optical absorption coefficient of CZTS thin film (Tsub=450 °C) measured by spectroscopic ellipsometry (SE) is above 104 cm−1.

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► Cu2ZnSnS4 films are directly deposited on Mo-coated glass by Pulsed Laser Deposition.
► These films are Cu-rich and S-poor and exhibit strong [1 1 2] texture.
► Compressive internal stress exists in all of these films.
► Eg of these films varies from 1.53 to 1.98 eV, as the function of growth temperature.
► Optical absorption coefficient of the Cu2ZnSnS4 film is above 104 cm−1.