کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
79211 | 49350 | 2011 | 6 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Rectification in CdS/TCO bilayers Rectification in CdS/TCO bilayers](/preview/png/79211.png)
The origin of process-induced rectification in CdS/ITO and CdS/SnO2 bilayers has been investigated. Both pre-treatment of the transparent conducting oxide (TCO) substrates and post-growth treatment of the bilayers were explored for both oxidising and reducing conditions. In/CdS/TCO structures were used for I–V testing, and the CdS layers were verified as being pinhole-free using a test employing a rectifying Au/CdS contact. Whilst neither pre-oxidation nor reduction of any TCO substrate failed to induce rectification in CdS/TCO, oxidation of CdS always induced rectification, regardless of the substrate type. This was attributed to oxidation of CdS (confirmed by Auger electron spectroscopy), and the results are consistent with a band diagram postulated for the CdO/CdS/ITO structure. Recommendations are made for the fabrication of CdTe/CdS/TCO solar cells.
Journal: Solar Energy Materials and Solar Cells - Volume 95, Issue 2, February 2011, Pages 491–496