کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7932766 | 1512818 | 2018 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
In situ spectroscopic ellipsometry study of low-temperature epitaxial silicon growth
ترجمه فارسی عنوان
مطالعه بیلیسومتری اسپکتروسکوپی در محیط سیلیکون اپیتاکسیال کم دما
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
چکیده انگلیسی
Low-temperature growth of doped epitaxial silicon layers is a promising way to reduce the cost of p-n junction formation in c-Si solar cells. In this work, we study process of highly doped epitaxial silicon layer growth using in situ spectroscopic ellipsometry. The film was deposited by plasma-enhanced chemical vapor deposition (PECVD) on a crystalline silicon substrate at a low substrate temperature of 200â¯Â°C. In the deposition process, SiF4 was used as a precursor, B2H6 as doping gas, and a hydrogen/argon mixture as carrier gas. A spectroscopic ellipsometer with a wide spectral range was used for in situ spectroscopic measurements. Since the temperature during process is 200â¯Â°C, the optical functions of silicon differ from these at room temperature and have to be adjusted. Thickness of the epitaxial silicon layer was fitted on in situ ellipsometric data. As a result we were able to determine the dynamics of epitaxial layer growth, namely initial layer formation time and epitaxial growth rate. This study opens new perspectives in understanding and monitoring the epitaxial silicon deposition processes as the model fitting can be applied directly during the growth.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Photonics and Nanostructures - Fundamentals and Applications - Volume 30, July 2018, Pages 73-77
Journal: Photonics and Nanostructures - Fundamentals and Applications - Volume 30, July 2018, Pages 73-77
نویسندگان
L. HalagaÄka, M. Foldyna, R. Leal, P. Roca i Cabarrocas,