کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7932962 | 1512845 | 2018 | 14 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
High efficiency gallium phosphide solar cells using TC-doped absorber layer
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
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چکیده انگلیسی
In this work, we have investigated the structural and magnetic properties of GaP-based diluted magnetic semiconductors (DMSs). Based on first-principle density functional theory (DFT) calculations and using a full potential linearized augmented plane wave (FP-LAPW) method in generalized gradient approximation (GGA), some significant structural and magnetic properties of Transition Compounds-doped Gallium Phosphide (Ga1âXTCXP: TCâ¯=â¯V, Mn, Fe, Co, Ni & Cu) as DMS are investigated. Then, a conventional gallium phosphide photovoltaic junction was simulated with a GaP absorber layer as reference cell. Last, a high efficiency gallium phosphide photovoltaic junction was proposed with a Ga1âXTCXP absorber layer. Simulation results showed that by using Ga1âXTCXP compound, the short-circuit current density (JSC) and the conversion efficiency of proposed solar cell increase impressively. Under global AM 1.5 conditions, the proposed cell structure has an open-circuit voltage (VOC) of 1.01â¯V, JSC of 9.05â¯mA/cm2 and a fill factor (FF) of 88%; all in all lead to total area conversion efficiency (η) improved to 8.06% which increased about 5.93% compared with a reference cell.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 104, October 2018, Pages 116-123
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 104, October 2018, Pages 116-123
نویسندگان
S. Khosroabadi, A. Kazemi,