کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7933645 | 1512851 | 2018 | 21 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Field effect transistors based on phosphorene nanoribbon with selective edge-adsorption: A first-principles study
ترجمه فارسی عنوان
ترانزیستورهای میدان مغناطیسی بر پایه نانوروبن فسفورن با جذب لبه های انتخابی: یک مطالعه اولیه
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
چکیده انگلیسی
By using density functional theory (DFT) and nonequilibrium Green's function (NEGF), field effect transistor (FET) based on zigzag shaped phosphorene nanoribbons (ZPNR) are investigated. The FETs are constructed with bare-edged ZPNRs as electrodes and H, Cl or OH adsorbed ZPNRs as channel. It is found FETs with the three kinds of channel show similar transport properties. The FET is p-type with a maximum current on/off ratio of 104 and a minimum off-current of 1â¯nA. The working mode of FETs is dependent on the parity of channel length. It can be either enhancement mode or depletion mode and the off-state current shows an even-odd oscillation. The current oscillations are interpreted with density of states (DOS) analysis and methods of evolution operator and tight-binding Hamiltonian. Operating mechanism of the designed FETs is also presented with projected local density of states and band diagrams.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 98, April 2018, Pages 60-65
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 98, April 2018, Pages 60-65
نویسندگان
Mengli Hu, Zhixiong Yang, Wenzhe Zhou, Aolin Li, Jiangling Pan, Fangping Ouyang,