کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
7934549 1512892 2014 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Optical and electrical properties of N-doped ZnO heterojunction photodiode
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Optical and electrical properties of N-doped ZnO heterojunction photodiode
چکیده انگلیسی
ZnO photodiodes consisting of high quality N-doped ZnO nanowires grown on n-GaN layer covered c-plane sapphire wafers were reported in this paper. The Au catalyzed ZnO nanowires were grown by chemical vapor deposition with excellent wurtzite structure. The I-V characteristics of the photodiodes show a rectifying diode behavior. Moreover, the pure ZnO/n-GaN sample was compared and analyzed to verify the p-type conductivity of heterojunction devices. We confirmed that such p-ZnO/n-GaN heterojunction devices exhibit distinct light emission when the electrode is applied with forward bias voltage. The lasing behavior of the p-n junction showed a threshold of 406 mW/cm2 by using optical pumping. The realization of p-type ZnO nanowire arrays with durable and controlled transport properties is important for the fabrication of nanoscale electronic and optoelectronic devices.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 57, March 2014, Pages 113-117
نویسندگان
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