Luminous enhancement of nitride light-emitting diodes by localized surface plasmon and triangular structure

A new type of nitride light-emitting diodes structure is proposed and investigated in this paper. The structure mainly includes n-GaN layer, multiple quantum wells layer, p-GaN layer，Ag inserts in p-GaN，TiO2-Ag grating and TiO2 triangular structure. The internal quantum efficiency is enhanced by the local surface plasmon and the coupling of the quantum wells, the light luminous area is increased by the triangular structure to increase the light extraction efficiency. The COMSOL software is used to simulate the LED structure in this research. The normalized radiated powers and absorbed powers under different geometric parameters and wavelength are obtained. The results reveal that the luminous intensity of the designed structure can be increased by nearly 73 times compared to the ordinary LED, which provide a foundation for the development of the high-performance LED.