کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7938759 | 1513181 | 2018 | 18 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Ab-initio study of electronic and optical properties of biaxially deformed single-layer GeS
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Ab-initio study of electronic and optical properties of biaxially deformed single-layer GeS Ab-initio study of electronic and optical properties of biaxially deformed single-layer GeS](/preview/png/7938759.png)
چکیده انگلیسی
In the present work, using density functional theory (DFT), we investigate the influence of biaxial strain εb on electronic and optical properties of single-layer GeS. Our DFT calculations show that single-layer GeS is a semiconducting material at equilibrium and semiconductor-metal phase transition may occur at large compression biaxial strain. The optical absorption of single-layer GeS is high in the range of the middle ultraviolet lights. Besides, the biaxial has a great impact on the optical spectra of single-layer GeS in the high energy domains. The semiconductor-metal phase transition and the computational results of the absorption of GeS can provide more useful information for applications in nanoelectromechanical and optoelectronic devices.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 120, August 2018, Pages 501-507
Journal: Superlattices and Microstructures - Volume 120, August 2018, Pages 501-507
نویسندگان
Khang D. Pham, Chuong V. Nguyen, Huynh V. Phuc, Tuan V. Vu, Nguyen V. Hieu, Bui D. Hoi, Le C. Nhan, Vo Q. Nha, Nguyen N. Hieu,