An ultra-low specific on-resistance double-gate trench SOI LDMOS with P/N pillars

A novel ultra-low specific on-resistance (Ron,sp) trench lateral double-diffused MOSFET with P/N pillars and dual trench gates (P/N DTG-T LDMOS) based on silicon-on-insulator technology is proposed in this paper. The new structure features dual trench gates and heavily doping P/N pillars. The P/N pillars are inserted into the drift region under the P-well. The P-pillar causes an assistant depletion effect on the drift region. The N-pillar can not only improve the breakdown voltage (BV) by modulating the electric field but also significantly reduce the Ron,sp by increasing the doping concentration of the drift region. Furthermore, the dual trench gates form dual conduction channels and the heavily doping N-pillar provides a lower resistance region for the carriers, which can both reduce the Ron,sp. Consequently, compared with the conventional trench LDMOS, a lower Ron,sp of 0.58 mΩ cm2 and a higher the figure of merit (FOM, FOM=BV2/Ron,sp) of 62.9 MW/cm2 are obtained for the P/N DTG-T LDMOS, which are improved by 74.8% and 308.4% respectively. Meanwhile, the BVs of the both structures are maintained at a same level of 190 V.