Keywords: خاص در مقاومت; Power device; Breakdown voltage; Specific on-resistance; SOI;
مقالات ISI خاص در مقاومت (ترجمه نشده)
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Improved SOI LDMOS performance by using a partial stepped polysilicon layer as the buried layer
Keywords: خاص در مقاومت; LDMOS; Stepped buried layer; Breakdown voltage; Specific on-resistance; Self-heating effect;
Novel lateral double-diffused MOSFET with folded silicon and high-permittivity dielectric breaking silicon limit
Keywords: خاص در مقاومت; LDMOS; High-k dielectric; Breakdown voltage; Specific on-resistance;
A dual channel three-terminal np-LDMOS with both majorities for conduction
Keywords: خاص در مقاومت; Breakdown voltage (BV); np-LDMOS; SOA; Specific on-resistance;
A 4H-SiC junction barrier Schottky diode with segregated floating trench and super junction
Keywords: خاص در مقاومت; Breakdown voltage; BV; Specific on-resistance; Ron,sp; Surface trench; ST; Floating trench; FT; Super junction; SJ;
Optimisation of lateral super-junction multi-gate MOSFET for high drive current and low specific on-resistance in sub-100â¯V applications
Keywords: خاص در مقاومت; Super-junction (SJ); Multi-gate (MG); Power MOSFETs; Silicon-on-insulator (SOI); Breakdown voltage (BV); Specific on-resistance;
A novel SOI LDMOS with substrate field plate and variable-k dielectric buried layer
Keywords: خاص در مقاومت; SOI LDMOS; Field plate; Variable-k dielectric; Breakdown voltage; Specific ON-resistance;
A SiC LDMOS with electric field modulation by a step compound drift region
Keywords: خاص در مقاومت; SiC LDMOS; Breakdown voltage; Specific on-resistance; Switching characteristic; Self-heating; Compound drift region;
A novel trench SOI LDMOS with a dual floating vertical field plate
Keywords: خاص در مقاومت; Silicon-on-insulator; Dual floating vertical field plate; Breakdown voltage; Specific on-resistance;
An ultra-low specific on-resistance double-gate trench SOI LDMOS with P/N pillars
Keywords: خاص در مقاومت; LDMOS; Trench; Pillar; Breakdown voltage (BV); Specific on-resistance;
Design of a novel triple reduced surface field LDMOS with partial linear variable doping n-type top layer
Keywords: خاص در مقاومت; Triple RESURF; Breakdown voltage; Specific on-resistance; Partial linear variable doping; N-type top layer
Improving breakdown, conductive, and thermal performances for SOI high voltage LDMOS using a partial compound buried layer
Keywords: خاص در مقاومت; SOI LDMOS; Breakdown voltage; Self-heating effect; Specific on-resistance; Compound buried layer;
Control of electric field in 4H-SiC UMOSFET: Physical investigation
Keywords: خاص در مقاومت; UMOSFET; Electric field; 4H-SiC; Specific on-resistance; Breakdown voltage
A novel low specific on-resistance double-gate LDMOS with multiple buried p-layers in the drift region based on the Silicon-On-Insulator substrate
Keywords: خاص در مقاومت; SOI; Multiple buried p-layers; Specific on-resistance; Breakdown voltage; RESURF
A low specific on-resistance power trench MOSFET with a buried-interface-drain
Keywords: خاص در مقاومت; Power MOSFET; Oxide trench; Breakdown voltage; Specific on-resistance
Analytical models of on-resistance and breakdown voltage for 4H-SiC floating junction Schottky barrier diodes
Keywords: خاص در مقاومت; 4H-SiC; Floating junction SBD; Specific on-resistance; Breakdown voltage; Analytical model
Design considerations of high voltage RESURF nLDMOS: An analytical and numerical study
Keywords: خاص در مقاومت; nLDMOS; 0.35 μm BiCMOS; RESURF; Smart power integrated circuit (SPIC); Breakdown voltage; Specific ON-resistance
High-voltage and low specific on-resistance power UMOSFET using P and N type columns
Keywords: خاص در مقاومت; UMOSFET; Power transistor; 4H-SiC; Specific on-resistance; Breakdown voltage; Simulation;
Theory of an improved vertical power MOSFET using high-k insulator
Keywords: خاص در مقاومت; High-k (Hk); Superjunction; Power MOSFET; Specific on-resistance;
Study on HK-VDMOS with Deep Trench Termination
Keywords: خاص در مقاومت; Power VDMOS; Specific on-resistance; High-K dielectric; Deep Trench Termination;
Low specific on-resistance power MOSFET with a surface improved super-junction layer
Keywords: خاص در مقاومت; Specific on-resistance; MOSFET; Multiple-direction depletion effect; Electric field modulation; Super-junction
Breakdown voltage improvement of LDMOSs by charge balancing: An inserted P-layer in trench oxide (IPT-LDMOS)
Keywords: خاص در مقاومت; LDMOS; Trench oxide; Breakdown voltage; Specific on-resistance
Power Trench MOSFETs with very low specific on-resistance for 25V applications
Keywords: خاص در مقاومت; Trench MOSFET; Miller charge; Specific on-resistance; Implants topology
Breaking the theoretical limit of SiC unipolar power device – A simulation study
Keywords: خاص در مقاومت; SiC; Super-junction; Specific on-resistance; Breakdown voltage; Charge imbalance