کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
11008950 | 1840427 | 2018 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Novel lateral double-diffused MOSFET with folded silicon and high-permittivity dielectric breaking silicon limit
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
A novel folded-accumulation LDMOS (FALDMOS) employing high-permittivity (HK) material as the partial field dielectric (HK-FALDMOS) is proposed and investigated by simulation. The device features the high-k dielectric partially replacing conventional SiO2 as the field oxide covering partial drift region and the gate electrode extending to the drain electrode. In the ON-state, the majority-carrier accumulation effect of HK-FALDMOS is more intense than that of FALDMOS, which is attributed to the larger capacitance of high-k film with the same dielectric thickness. Besides, a higher doping concentration in drift region I is obtained due to the electric field modulation effect resulting from the employed high-k film, which further reduces the specific on-resistance (Ron,sp) of the drift region I. The breakdown voltage (BV) declines slightly with the increase of permittivity of high-k film. Simulation results show that the proposed HK-FALDMOS has best-in-class Ron,sp-BV performance (9.9â¯â¯mΩâ¯mm2 with BV of 44.9â¯V when the relative permittivity of high-k is 8), which breaks the silicon limit of LDMOS.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 123, November 2018, Pages 280-285
Journal: Superlattices and Microstructures - Volume 123, November 2018, Pages 280-285
نویسندگان
Baoxing Duan, Tongtong Shi, Yintang Yang,