کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7942128 | 1513213 | 2015 | 10 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Theory of an improved vertical power MOSFET using high-k insulator
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
An improved structure of the vertical power MOSFET using high-k insulator (Hk-MOSFET), which has a better relationship between specific on-resistance (Ron) and breakdown voltage (VB) than the conventional Hk-MOSFET and the superjunction MOSFET, is studied. An analytic model of this improved Hk-MOSFET is proposed, which can be used to well explain the physical reason of the improvement as well as to obtain an optimal design. It is found that the theoretical results match well with the numerical simulation results, where the errors of VB and Ron are both less than 7%. Moreover, the numerical simulation results show that, with the guidance of the proposed analytic model, Ron of the improved Hk-MOSFET can be optimized to be about 30%-50% lower than that of the conventional Hk-MOSFET with VBÂ =Â 300-1000Â V.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 88, December 2015, Pages 244-253
Journal: Superlattices and Microstructures - Volume 88, December 2015, Pages 244-253
نویسندگان
Mingmin Huang, Xingbi Chen,