کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1554181 | 998773 | 2012 | 9 صفحه PDF | دانلود رایگان |
For the first time, the novel inserted P-layer in trench oxide of LDMOS structure (IPT-LDMOS) is proposed in which a trench oxide with inserted P-layer is considered in the drift region to improve the breakdown voltage. Our simulation with two dimensional ALTAS simulator shows that by determining the optimum doping concentration of the P-layer, the charges of the N-drift and P-layer regions would be balanced. Therefore, complete depletion at the breakdown voltage in the drift region happens. Also, electric field in the IPT-LDMOS is modified by producing additional peaks which decrease the common peaks near the drain and source junctions.
► Novel inserted P-layer in trench oxide of LDMOS structure is proposed.
► A trench oxide with inserted P-layer in drift region improves breakdown voltage.
► Charges of N-drift and P-layer regions can be balanced in optimum doping of P-layer.
► Complete depletion in the drift region at breakdown voltage of structure happens.
► Electric field in the structure is modified by producing additional peaks.
Journal: Superlattices and Microstructures - Volume 51, Issue 3, March 2012, Pages 412–420