کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
11008940 1840427 2018 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
A 4H-SiC junction barrier Schottky diode with segregated floating trench and super junction
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
A 4H-SiC junction barrier Schottky diode with segregated floating trench and super junction
چکیده انگلیسی
A 4H-SiC Junction Barrier Schottky Diode with Segregated Floating Trench and Super Junction (S-FT SJ JBS) is presented in this paper. By adopting segregated integrated trench and super junction, the high electric field not only focus on the bottom of trench but also gathers in the top of trench and the edge of super junction, therefore the distributions of the high electric field is more uniform, and thus to substantially improve the breakdown voltage (BV). By using the floating trench, the area of schottky contact is enlarged, thus the density of current is increased in the on state, and the specific on-resistance (Ron,sp) of the device is ultimately decreased. The results of simulation show that the BV and Ron,sp of S-FT SJ JBS diode are 1891V and 0.16 mΩ cm2, and the BV is improved by 29.5% and the Ron,sp is decreased by 50% compared with I-FT SJ JBS diode. The Baliga figure-of-merit (BFOM) of S-FT SJ JBS diode is 894 W·cm−2 which is increased by 236.1% compared with I-FT SJ JBS diode.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 123, November 2018, Pages 201-209
نویسندگان
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