کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7940122 | 1398534 | 2017 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Influence of AZO stair-like transparent layers on GaN-based light-emitting diodes
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Influence of AZO stair-like transparent layers on GaN-based light-emitting diodes Influence of AZO stair-like transparent layers on GaN-based light-emitting diodes](/preview/png/7940122.png)
چکیده انگلیسی
The GaN-based light-emitting diodes (LEDs) with various height ratios of aluminum-doped zinc oxide (AZO) stair-like transparent layers are fabricated and comparatively investigated. The characteristics of the LEDs with conventional plane AZO transparent layer (device A) and AZO stair-like transparent layers having height ratios of 1:1:1 (device B), 1.5:1:0.5 (device C), and 0.5:1:1.5 (device D) are compared. Attributed that the lower resistance is formed in the thinner AZO film of the stair-like structure, the current crowding effect is improved for extending the whole current-spreading area. Experimentally, the forward turn-on voltages of the LEDs are reduced from 3.68Â V to 3.42Â V as the plane AZO transparent layer is processed to form the stair-like transparent layers with height ratio of 1:1:1. In addition, the light luminous flux, output power, external quantum efficiency, and wall-plug efficiency of the device B are enhanced by 30.5, 12.1, 22.2, and 20.7%, respectively, as compared to the traditional device with plane AZO transparent layer.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 110, October 2017, Pages 171-179
Journal: Superlattices and Microstructures - Volume 110, October 2017, Pages 171-179
نویسندگان
Syuan-Hao Liou, Jung-Hui Tsai, Wen-Chau Liu, Pao-Sheng Lin, Yu-Chi Chen,