کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7940215 | 1513192 | 2017 | 17 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Optimization of growth and fabrication techniques to enhance the InGaN/GaN multiple quantum well solar cells performance
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Optimization of growth and fabrication techniques to enhance the InGaN/GaN multiple quantum well solar cells performance Optimization of growth and fabrication techniques to enhance the InGaN/GaN multiple quantum well solar cells performance](/preview/png/7940215.png)
چکیده انگلیسی
Two structures of InGaN/GaN multiple quantum well solar cells are grown and fabricated in this work, which are 30 periods In0.14Ga0.86N/GaN (1.72 nm/4.14Â nm, sample A) and In0.19Ga0.81N/GaN (2.76 nm/4.14Â nm, sample B), respectively. The peak external quantum efficiency of sample A can reach over 60%, which is considered to be related with the longer carrier lifetime. The current density-voltage characteristics show that sample A exhibited an open-circuit voltage of 2.13Â V, a short-circuit current density of 2.55Â mA/cm2, a fill-factor of 65.7% and a conversion efficiency of 3.56%. Those indicators are among the best up to date as far as we know for InGaN/GaN solar cells.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 109, September 2017, Pages 194-200
Journal: Superlattices and Microstructures - Volume 109, September 2017, Pages 194-200
نویسندگان
Shiming Liu, Quan Wang, Hongling Xiao, Kun Wang, Cuimei Wang, Xiaoliang Wang, Weikun Ge, Zhanguo Wang,