کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7940311 | 1513192 | 2017 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
A non-Ohmic normally-off GaN monolithic bidirectional switch with MIS field effect schottky tunnel junction
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
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چکیده انگلیسی
A non-Ohmic normally-off GaN Monolithic bidirectional switch (MBS) with two metal-insulator-semiconductor field-effect schottky tunnel junctions is proposed and investigated by TCAD sentaurus. The MBS exhibits normally-off operation on account of the thick tunnel barrier at schottky-source and schottky-drain electrodes, whose effective thickness is controlled by two insulated gates next to source and drain. A positive gate bias can pull down the conduction band and result in a thin tunnel barrier with high tunneling current, while a zero gate bias brings about a thick barrier effectively suppressing the tunneling current. The simulated results show that the proposed MBS can deliver a low off-state current of 10 μA and a small on-state voltage of 3.55 V at the same time. And compared with the conventional Ohmic-contact MBS, the proposed MBS does not show any degeneration in on-state loss. Moreover, the absence of Au-based Ohmic process and high temperature annealing process enables the proposed MBS with CMOS compatibility and low thermal budget.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 109, September 2017, Pages 414-422
Journal: Superlattices and Microstructures - Volume 109, September 2017, Pages 414-422
نویسندگان
Yijun Shi, Wanjun Chen, Qi Zhou, Bo Zhang,