کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
7940559 1513194 2017 14 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Hot electron assisted vertical leakage/breakdown in AlGaN/GaN heterostructures on Si substrates
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Hot electron assisted vertical leakage/breakdown in AlGaN/GaN heterostructures on Si substrates
چکیده انگلیسی
We present a hot electron assisted vertical leakage/breakdown mechanism in AlGaN/GaN heterostructures on Si substrates by a combination of applying vertical and lateral bias conditions. Beyond a critical bias point, the vertical leakage current under the combined bias condition is larger than that under a pure vertical bias condition which results in a lower breakdown voltage. The critical bias has a positive temperature dependence. A model is proposed that highly energetic hot electrons can release trapped electrons from defects and even ionize them. The model is proved by investigating the detrapping and ionization mechanisms by changing hot electron energy.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 107, July 2017, Pages 240-245
نویسندگان
, , , , , , , , , , ,