Effects of structural defects and polarization charges in InGaN-based double-junction solar cell

The performance of a double heterojunction solar cell based on Indium Gallium Nitride (InGaN) including a tunnel junction was simulated. The most challenging aspects of InGaN solar cells development being the crystal polarization and structural defects detrimental effects, their impact on the solar cell performances has been investigated in detail. The solar cell simulation was performed using physical models and InGaN parameters extracted from experimental measurements. The optimum efficiency of the heterojunction solar cell was obtained using a multivariate optimization method which allows to simultaneously optimize eleven parameters. The optimum defect free efficiency obtained is 24.4% with a short circuit current JSC=12.92mA/cm2, an open circuit voltage VOC=2.29V and a fill factor FF=82.55%. The performances evolution as functions of the polarization and the defects types and parameters was studied from their maximum down to as low as a 2% efficiency.